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TK55D10J1(Q)
Beschreibung:
TK55D10J1(Q) datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
TK55D10J1(Q)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
TK55D10J1(Q) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Rise Time:
7 ns
Case/Package:
TO-220-3
Power Dissipation:
140 W
Max Power Dissipation:
140 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
100 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
91 In Stock
Applications:
Datacom module
Motor drives
PC & notebooks
Fall Time:
20 ns
Rds On Max:
10.5 mΩ
Input Capacitance:
5.7 nF
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
10.5 mΩ
Continuous Drain Current (ID):
55 A
Drain to Source Breakdown Voltage:
100 V
Modellnummer:
TK55D10J1 ((Q)
Einleitung
TK55D10J1(Q) Overview\\nTK55D10J1(Q) is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have TK55D10J1(Q) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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