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SI2331DS-T1-E3

Beschreibung:
SI2331DS-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
SI2331DS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI2331DS-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix. Rozee is one of the Distributors. Wide range of applications.
Mount:
Surface Mount
Rise Time:
35 ns
Case/Package:
TO-236-3
Input Capacitance:
780 pF
Number of Elements:
1
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
48 mΩ
Continuous Drain Current (ID):
3.2 A
Drain to Source Breakdown Voltage:
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
243 In Stock
Applications:
Datacom module Grid infrastructure Portable electronics
Fall Time:
35 ns
Rds On Max:
48 mΩ
Number of Pins:
3
Power Dissipation:
710 mW
Turn-Off Delay Time:
65 ns
Max Power Dissipation:
710 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
12 V
Modellnummer:
Die in Absatz 1 genannten Anforderungen gelten nicht für die in Absatz 1 genannten Fahrzeuge.
Einleitung
SI2331DS-T1-E3 Overview\\nSI2331DS-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI2331DS-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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