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STB30NM60ND
Beschreibung:
STB30NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
STB30NM60ND
Manufacturer:
STMicroelectronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
STB30NM60ND More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: STMicroelectronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Rise Time:
50 ns
Resistance:
130 MΩ
Case/Package:
D2PAK
Input Capacitance:
2.8 nF
Number of Elements:
1
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
130 mΩ
Continuous Drain Current (ID):
25 A
Drain to Source Breakdown Voltage:
600 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
974 In Stock
Applications:
Broadband fixed line access
Power delivery
PC & notebooks
Fall Time:
75 ns
Rds On Max:
130 mΩ
Nominal Vgs:
4 V
Number of Pins:
3
Power Dissipation:
190 W
Turn-Off Delay Time:
110 ns
Max Power Dissipation:
190 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
25 V
Drain to Source Voltage (Vdss):
600 V
Modellnummer:
Die Bezeichnung "S" ist die Bezeichnung für die Bezeichnung des Erzeugnisses.
Einleitung
STB30NM60ND Overview\\nSTB30NM60ND is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have STB30NM60ND high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. STB30NM60N
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