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SUP85N03-3M6P-GE3
Beschreibung:
SUP85N03-3M6P-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
SUP85N03-3M6P-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SUP85N03-3M6P-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Fall Time:
10 ns
Rise Time:
10 ns
Case/Package:
TO-220AB
Input Capacitance:
3.535 nF
Threshold Voltage:
1 V
Number of Elements:
1
Turn-Off Delay Time:
35 ns
Max Power Dissipation:
78.1 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
272 In Stock
Applications:
Datacom module
Factory automation & control
Data storage
Weight:
6.000006 g
Packaging:
Tape & Reel (TR)
Rds On Max:
3.6 mΩ
Number of Pins:
3
Power Dissipation:
3.1 W
Number of Channels:
1
Turn-On Delay Time:
11 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
3.6 mΩ
Continuous Drain Current (ID):
85 A
Drain to Source Breakdown Voltage:
30 V
Modellnummer:
Die in Absatz 1 Buchstabe a genannten Angaben sind zu beachten.
Einleitung
SUP85N03-3M6P-GE3 Overview\\nSUP85N03-3M6P-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SUP85N03-3M6P-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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