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SI3529DV-T1-E3
Beschreibung:
SI3529DV-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
SI3529DV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI3529DV-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Rise Time:
38 ns
Case/Package:
TSOP
Input Capacitance:
205 pF
Number of Elements:
2
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
215 mΩ
Continuous Drain Current (ID):
1.95 A
Drain to Source Breakdown Voltage:
40 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
489 In Stock
Applications:
Datacom module
Industrial transport (non-car & non-light truck)
PC & notebooks
Fall Time:
38 ns
Rds On Max:
125 mΩ
Number of Pins:
6
Power Dissipation:
1.15 W
Turn-Off Delay Time:
10 ns
Max Power Dissipation:
1.4 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
40 V
Modellnummer:
SI3529DV-T1-E3
Einleitung
SI3529DV-T1-E3 Overview\\nSI3529DV-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI3529DV-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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