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BSG0810NDIATMA1
Beschreibung:
BSG0810NDIATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
BSG0810NDIATMA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BSG0810NDIATMA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$2.54
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Packaging:
Tape & Reel
Number of Pins:
8
Input Capacitance:
1.04 nF
Number of Channels:
2
Max Power Dissipation:
2.5 W
Max Operating Temperature:
150 °C
Gate to Source Voltage (Vgs):
16 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
25 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
8306 In Stock
Applications:
TV
Enterprise projectors
Height:
1 mm
Rds On Max:
3 mΩ
Package Quantity:
5000
Power Dissipation:
2.5 W
On-State Resistance:
900 µΩ
Max Dual Supply Voltage:
25 V
Min Operating Temperature:
-55 °C
Continuous Drain Current (ID):
39 A
Drain to Source Voltage (Vdss):
25 V
Modellnummer:
BSG0810NDIATMA1
Einleitung
BSG0810NDIATMA1 Overview\\\\nBSG0810NDIATMA1 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BSG0810NDIATMA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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