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CSD87312Q3E
Beschreibung:
CSD87312Q3E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
CSD87312Q3E
Manufacturer:
Texas Instruments
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
CSD87312Q3E More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.08
Remark:
Manufacturer: Texas Instruments.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1 mm
Fall Time:
2.8 ns
Rise Time:
16 ns
Rds On Max:
33 mΩ
Number of Pins:
8
Input Capacitance:
1.25 nF
Number of Channels:
2
Turn-On Delay Time:
7.8 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
31 mΩ
Continuous Drain Current (ID):
27 A
Drain to Source Voltage (Vdss):
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
1654 In Stock
Applications:
Mobile phones
Infotainment & cluster
Width:
3.3 mm
Length:
3.3 mm
Packaging:
Digi-Reel®
Thickness:
900 µm
Schedule B:
8541290080
Contact Plating:
Gold
Power Dissipation:
2.5 W
Number of Elements:
2
Turn-Off Delay Time:
17 ns
Max Power Dissipation:
2.5 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
10 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
30 V
Modellnummer:
CSD87312Q3E
Einleitung
CSD87312Q3E Overview\\\\nCSD87312Q3E is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have CSD87312Q3E high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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