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IPG20N10S4L35AATMA1
Beschreibung:
IPG20N10S4L35AATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Rochester Electronics stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
IPG20N10S4L35AATMA1
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IPG20N10S4L35AATMA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.51
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Packaging:
Tape & Reel
Number of Pins:
8
Input Capacitance:
1.105 nF
Number of Channels:
2
On-State Resistance:
45 mΩ
Max Power Dissipation:
43 W
Max Operating Temperature:
175 °C
Drain to Source Resistance:
29 mΩ
Continuous Drain Current (ID):
20 A
Drain to Source Voltage (Vdss):
100 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
9804 In Stock
Applications:
Pro audio, video & signage
Aerospace & defense
Portable electronics
Height:
1.1 mm
Rds On Max:
35 mΩ
Package Quantity:
5000
Power Dissipation:
43 W
Turn-On Delay Time:
3 ns
Turn-Off Delay Time:
18 ns
Max Dual Supply Voltage:
100 V
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
16 V
Max Junction Temperature (Tj):
175 °C
Drain to Source Breakdown Voltage:
100 V
Modellnummer:
IPG20N10S4L35AATMA1
Einleitung
IPG20N10S4L35AATMA1 Overview\\\\nIPG20N10S4L35AATMA1 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IPG20N10S4L35AATMA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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