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JAN2N3439L
Beschreibung:
JAN2N3439L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
JAN2N3439L
Manufacturer:
Microsemi
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
JAN2N3439L More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Microsemi.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Packaging:
Bulk
Case/Package:
TO-5
Power Dissipation:
800 mW
Max Collector Current:
1 A
Max Operating Temperature:
200 °C
Emitter Base Voltage (VEBO):
7 V
Collector Emitter Voltage (VCEO):
350 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
Qty:
48 In Stock
Applications:
Aerospace & defense
Lighting
Tablets
Polarity:
NPN
Schedule B:
8541210080
Number of Pins:
3
Number of Elements:
1
Max Power Dissipation:
800 mW
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
450 V
Collector Emitter Breakdown Voltage:
350 V
Modellnummer:
JAN2N3439L
Einleitung
JAN2N3439L Overview\\nJAN2N3439L is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have JAN2N3439L high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. JAN2N3439L is
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