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RJH1CF7RDPQ-80#T2
Beschreibung:
RJH1CF7RDPQ-80#T2 datasheet pdf and Transistors - IGBTs - Single product details from Integrated Device Technology (Renesas Electronics America) stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
RJH1CF7RDPQ-80#T2
Manufacturer:
Integrated Device Technology (Renesas Electronics America)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
RJH1CF7RDPQ-80#T2 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Integrated Device Technology (Renesas Electronics America).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Element Configuration:
Single
Max Power Dissipation:
250 W
Collector Emitter Breakdown Voltage:
1.2 kV
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
864 In Stock
Applications:
Datacom module
Power delivery
Gaming
Case/Package:
TO-247
Max Collector Current:
60 A
Collector Emitter Voltage (VCEO):
1.2 kV
Modellnummer:
RJH1CF7RDPQ-80#T2
Einleitung
RJH1CF7RDPQ-80#T2 Overview\\nRJH1CF7RDPQ-80#T2 is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have RJH1CF7RDPQ-80#T2 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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