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RJP4009ANS-01#Q6
Beschreibung:
RJP4009ANS-01#Q6 datasheet pdf and Transistors - IGBTs - Single product details from Integrated Device Technology (Renesas Electronics America) stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
RJP4009ANS-01#Q6
Manufacturer:
Integrated Device Technology (Renesas Electronics America)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
RJP4009ANS-01#Q6 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Integrated Device Technology (Renesas Electronics America).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Max Power Dissipation:
1.8 W
Collector Emitter Breakdown Voltage:
400 V
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
916 In Stock
Applications:
Infotainment & cluster
Industrial transport (non-car & non-light truck)
Data storage
Number of Pins:
8
Collector Emitter Voltage (VCEO):
9 V
Modellnummer:
RJP4009ans-01#Q6
Einleitung
RJP4009ANS-01#Q6 Overview\\nRJP4009ANS-01#Q6 is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have RJP4009ANS-01#Q6 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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