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FGL40N120ANDTU
Beschreibung:
FGL40N120ANDTU datasheet pdf and Transistors - IGBTs - Single product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
FGL40N120ANDTU
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
FGL40N120ANDTU More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$7.16
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Height:
26 mm
Weight:
6.756 g
Schedule B:
8541290080
Current Rating:
64 A
Contact Plating:
Tin
Turn-On Delay Time:
15 ns
Voltage Rating (DC):
1.2 kV
Max Collector Current:
64 A
Reverse Recovery Time:
112 ns
Min Operating Temperature:
-55 °C
Max Junction Temperature (Tj):
150 °C
Collector Emitter Breakdown Voltage:
1.2 kV
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
1053 In Stock
Applications:
Data storage
Building automation
Broadband fixed line access
Width:
5 mm
Length:
20 mm
Rise Time:
20 ns
Case/Package:
TO-264
Number of Pins:
3
Power Dissipation:
500 W
Turn-Off Delay Time:
110 ns
Element Configuration:
Single
Max Power Dissipation:
500 W
Max Operating Temperature:
150 °C
Continuous Collector Current:
64 A
Collector Emitter Voltage (VCEO):
1.2 kV
Collector Emitter Saturation Voltage:
3.15 V
Modellnummer:
FGL40N120ANDTU
Einleitung
FGL40N120ANDTU Overview\\\\nFGL40N120ANDTU is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have FGL40N120ANDTU high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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