logo

NE3509M04-T2-A

Beschreibung:
NE3509M04-T2-A datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Rochester Electronics stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
NE3509M04-T2-A
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NE3509M04-T2-A More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.83
Remark:
Manufacturer: Rochester Electronics. Rozee is one of the Distributors. Wide range of applications.
Gain:
17.5 dB
Frequency:
2 GHz
Case/Package:
SOT-23
Test Current:
10 mA
Current Rating:
60 mA
Voltage Rating:
4 V
Voltage Rating (DC):
4 V
Max Operating Temperature:
150 °C
Gate to Source Voltage (Vgs):
-3 V
Drain to Source Voltage (Vdss):
4 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
3998 In Stock
Applications:
Medical Body electronics & lighting
Mount:
Surface Mount
Packaging:
Tape and Reel
Noise Figure:
0.4 dB
Test Voltage:
2 V
Number of Pins:
4
Power Dissipation:
125 mW
Max Power Dissipation:
150 mW
Min Operating Temperature:
-65 °C
Continuous Drain Current (ID):
60 mA
Drain to Source Breakdown Voltage:
2 V
Modellnummer:
Die in Absatz 1 Buchstabe a genannten Vorschriften gelten nicht für:
Einleitung
NE3509M04-T2-A Overview\\\\nNE3509M04-T2-A is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NE3509M04-T2-A high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
Senden Sie RFQ
Auf Lager:
MOQ: