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AFT09MS031GNR1
Beschreibung:
AFT09MS031GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
AFT09MS031GNR1
Manufacturer:
NXP Semiconductors
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
AFT09MS031GNR1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$21.03
Remark:
Manufacturer: NXP Semiconductors.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
17.2 dB
Weight:
547.996282 mg
Schedule B:
8541290080
Output Power:
31 W
Test Voltage:
13.6 V
Voltage Rating:
40 V
Number of Elements:
1
Min Operating Temperature:
-40 °C
Drain to Source Voltage (Vdss):
40 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
7365 In Stock
Applications:
Body electronics & lighting
Advanced driver assistance systems (ADAS)
Mount:
Surface Mount
Frequency:
870 MHz
Case/Package:
TO-270-2
Test Current:
500 mA
Number of Pins:
3
Contact Plating:
Tin
Max Operating Temperature:
225 °C
Gate to Source Voltage (Vgs):
12 V
Drain to Source Breakdown Voltage:
40 V
Modellnummer:
Die in Absatz 1 genannten Anforderungen gelten nicht für die in Absatz 1 genannten Fahrzeuge.
Einleitung
AFT09MS031GNR1 Overview\\\\nAFT09MS031GNR1 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have AFT09MS031GNR1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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