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NE68118-T1-A
fabricant:
Dialog Halbleiter
Beschreibung:
NE68118-T1-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Dialog Semiconductor stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
NE68118-T1-A
Manufacturer:
Dialog Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
NE68118-T1-A More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$2.00
Remark:
Manufacturer: Dialog Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
14 dB
Polarity:
NPN
Output Power:
150 mW
Power Dissipation:
150 mW
Element Configuration:
Single
Max Power Dissipation:
150 mW
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
10 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
3528 In Stock
Applications:
Wireless infrastructure
Factory automation & control
Home theater & entertainment
Mount:
Surface Mount
Case/Package:
SOT-343
Number of Pins:
4
Transition Frequency:
9 GHz
Max Collector Current:
65 mA
Max Operating Temperature:
150 °C
Continuous Collector Current:
65 mA
Collector Emitter Voltage (VCEO):
10 V
Modellnummer:
NE68118-T1-A
Einleitung
NE68118-T1-A Overview\\\\nNE68118-T1-A is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NE68118-T1-A high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. NE68118
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