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BFR93AWE6327
Beschreibung:
BFR93AWE6327 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Rochester Electronics stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
BFR93AWE6327
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BFR93AWE6327 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.07
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
15.5 dB
Polarity:
NPN
Current Rating:
130 mA
Power Dissipation:
300 mW
Transition Frequency:
6 GHz
Max Collector Current:
90 mA
Gain Bandwidth Product:
6 GHz
Min Operating Temperature:
-65 °C
Collector Emitter Voltage (VCEO):
12 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
9109 In Stock
Applications:
TV
Building automation
Datacom module
Mount:
Surface Mount
Case/Package:
SOT-323-3
Number of Pins:
3
Voltage Rating (DC):
4 V
Element Configuration:
Single
Max Power Dissipation:
300 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
2 V
Collector Emitter Breakdown Voltage:
12 V
Modellnummer:
BFR93AWE6327
Einleitung
BFR93AWE6327 Overview\\\\nBFR93AWE6327 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFR93AWE6327 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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