english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
HN3C10FUTE85LF
Beschreibung:
HN3C10FUTE85LF datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
HN3C10FUTE85LF
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
HN3C10FUTE85LF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.54
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
11.5 dB
Packaging:
Tape & Reel (TR)
Transition Frequency:
7 GHz
Max Collector Current:
80 mA
Collector Emitter Breakdown Voltage:
12 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
5093 In Stock
Applications:
Connected peripherals & printers
Data storage
Industrial transport (non-car & non-light truck)
Mount:
Surface Mount
Case/Package:
SOT-26
Max Breakdown Voltage:
12 V
Max Power Dissipation:
200 mW
Modellnummer:
HN3C10FUTE85LF
Einleitung
HN3C10FUTE85LF Overview\\\\nHN3C10FUTE85LF is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN3C10FUTE85LF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
Senden Sie RFQ
Auf Lager:
MOQ: