BFS481H6327XTSA1
Spezifikationen
Part Number:
BFS481H6327XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BFS481H6327XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.71
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Gain:
20 dB
Width:
1.25 mm
Length:
2 mm
Frequency:
8 GHz
Power Gain:
20 dB
Noise Figure:
0.9 dB
Contact Plating:
Tin
Power Dissipation:
175 mW
Transition Frequency:
8 GHz
Max Collector Current:
20 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
2 V
Collector Emitter Voltage (VCEO):
12 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
983 In Stock
Applications:
Factory automation & control
Connected peripherals & printers
Mount:
Surface Mount
Height:
800 µm
Polarity:
NPN
Packaging:
Tape & Reel
Case/Package:
SOT
Number of Pins:
6
Package Quantity:
3000
Number of Elements:
2
Max Breakdown Voltage:
12 V
Max Power Dissipation:
175 mW
Min Operating Temperature:
-65 °C
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
12 V
Modellnummer:
BFS481H6327XTSA1
Einleitung
BFS481H6327XTSA1 Overview\\\\nBFS481H6327XTSA1 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFS481H6327XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensivel
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