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BFP842ESDH6327XTSA1
Beschreibung:
BFP842ESDH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
BFP842ESDH6327XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BFP842ESDH6327XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.51
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Gain:
26 dB
Polarity:
NPN
Packaging:
Tape & Reel
Case/Package:
SOT-343
Number of Pins:
4
Package Quantity:
3000
Max Breakdown Voltage:
3.7 V
Max Power Dissipation:
120 mW
Min Operating Temperature:
-55 °C
Continuous Collector Current:
40 mA
Collector Emitter Voltage (VCEO):
3.25 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
7578 In Stock
Applications:
Infotainment & cluster
Wireless infrastructure
PC & notebooks
Mount:
Surface Mount
Frequency:
60 GHz
Power Gain:
23.5 dB
Noise Figure:
0.4 dB
Contact Plating:
Tin
Transition Frequency:
60 GHz
Max Collector Current:
40 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
4.1 V
Collector Base Voltage (VCBO):
4.1 V
Collector Emitter Breakdown Voltage:
3.7 V
Modellnummer:
BFP842ESDH6327XTSA1
Einleitung
BFP842ESDH6327XTSA1 Overview\\\\nBFP842ESDH6327XTSA1 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFP842ESDH6327XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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