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BCM847BV,115
fabricant:
Nexperia
Beschreibung:
BCM847BV,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
BCM847BV,115
Manufacturer:
Nexperia
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BCM847BV,115 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.34
Remark:
Manufacturer: Nexperia.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
600 µm
Weight:
4.535924 g
Polarity:
NPN
Schedule B:
8541210080
Case/Package:
SOT-666
Number of Pins:
6
Power Dissipation:
300 mW
Transition Frequency:
250 MHz
Max Breakdown Voltage:
45 V
Max Power Dissipation:
300 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
6 V
Collector Emitter Voltage (VCEO):
45 V
Collector Emitter Saturation Voltage:
400 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
7450 In Stock
Applications:
Data center & enterprise computing
Wireless infrastructure
Motor drives
Width:
1.3 mm
Length:
1.7 mm
hFE Min:
200
Frequency:
250 MHz
Termination:
SMD/SMT
Max Frequency:
250 MHz
Contact Plating:
Tin
Number of Elements:
2
Element Configuration:
Dual
Max Collector Current:
100 mA
Gain Bandwidth Product:
250 MHz
Min Operating Temperature:
-65 °C
Collector Base Voltage (VCBO):
50 V
Collector Emitter Breakdown Voltage:
45 V
Modellnummer:
BCM847BV,115
Einleitung
BCM847BV,115 Overview\\\\nBCM847BV,115 is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BCM847BV,115 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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