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UMZ1NT1G

Beschreibung:
UMZ1NT1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
UMZ1NT1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
UMZ1NT1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.27
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor. Rozee is one of the Distributors. Wide range of applications.
hFE Min:
200
Frequency:
114 MHz
Schedule B:
8541210080
Max Frequency:
114 MHz
Number of Pins:
6
Number of Elements:
2
Transition Frequency:
142 MHz
Max Breakdown Voltage:
50 V
Max Power Dissipation:
250 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
7 V
Collector Emitter Voltage (VCEO):
50 V
Collector Emitter Saturation Voltage:
250 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
260 In Stock
Applications:
Wearables (non-medical) TV Appliances
Polarity:
PNP, NPN
Packaging:
Tape and Reel
Case/Package:
SC
Current Rating:
200 mA
Power Dissipation:
385 mW
Voltage Rating (DC):
50 V
Element Configuration:
Dual
Max Collector Current:
200 mA
Gain Bandwidth Product:
114 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
60 V
Collector Emitter Breakdown Voltage:
50 V
Modellnummer:
UMZ1NT1G
Einleitung
UMZ1NT1G Overview\\\\nUMZ1NT1G is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have UMZ1NT1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. UMZ1NT1G is
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