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HN4A56JU(TE85L,F)
Beschreibung:
HN4A56JU(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
HN4A56JU(TE85L,F)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN4A56JU(TE85L,F) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.06
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Max Collector Current:
150 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
-50 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
9317 In Stock
Applications:
Aerospace & defense
Broadband fixed line access
Home theater & entertainment
Contact Plating:
Silver, Tin
Max Power Dissipation:
200 mW
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
50 V
Modellnummer:
HN4A56JU ((TE85L,F)
Einleitung
HN4A56JU(TE85L,F) Overview\\\\nHN4A56JU(TE85L,F) is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN4A56JU(TE85L,F) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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