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NSVT65011MW6T1G
Beschreibung:
NSVT65011MW6T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
NSVT65011MW6T1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NSVT65011MW6T1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.48
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Packaging:
Tape & Reel (TR)
Number of Pins:
6
Max Breakdown Voltage:
65 V
Max Power Dissipation:
380 mW
Collector Emitter Voltage (VCEO):
600 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
143 In Stock
Applications:
Enterprise projectors
Advanced driver assistance systems (ADAS)
Polarity:
NPN
Case/Package:
SOT-363
Transition Frequency:
100 MHz
Max Collector Current:
100 mA
Max Operating Temperature:
150 °C
Collector Emitter Breakdown Voltage:
65 V
Modellnummer:
Die Ausrüstung ist in Form von einem Zustandsausrüstungssystem.
Einleitung
NSVT65011MW6T1G Overview\\\\nNSVT65011MW6T1G is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NSVT65011MW6T1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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