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HN1B01FU-Y(L,F,T)
Beschreibung:
HN1B01FU-Y(L,F,T) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
HN1B01FU-Y(L,F,T)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN1B01FU-Y(L,F,T) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.33
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Transition Frequency:
120 MHz
Max Collector Current:
150 mA
Collector Emitter Voltage (VCEO):
300 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
2459 In Stock
Applications:
Factory automation & control
Power delivery
Appliances
Packaging:
Tape & Reel (TR)
Max Breakdown Voltage:
50 V
Max Power Dissipation:
200 mW
Collector Emitter Breakdown Voltage:
50 V
Modellnummer:
HN1B01FU-Y(L,F,T)
Einleitung
HN1B01FU-Y(L,F,T) Overview\\\\nHN1B01FU-Y(L,F,T) is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN1B01FU-Y(L,F,T) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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