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HN1C03FU-A(TE85L,F
Beschreibung:
HN1C03FU-A(TE85L,F datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
HN1C03FU-A(TE85L,F
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN1C03FU-A(TE85L,F More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.45
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Transition Frequency:
30 MHz
Max Collector Current:
300 mA
Collector Emitter Voltage (VCEO):
100 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
8721 In Stock
Applications:
Grid infrastructure
Data storage
Infotainment & cluster
Packaging:
Tape & Reel (TR)
Max Breakdown Voltage:
20 V
Max Power Dissipation:
200 mW
Collector Emitter Breakdown Voltage:
20 V
Modellnummer:
HN1C03FU-A(TE85L,F
Einleitung
HN1C03FU-A(TE85L,F Overview\\\\nHN1C03FU-A(TE85L,F is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN1C03FU-A(TE85L,F high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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