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EMX1DXV6T5G
Beschreibung:
EMX1DXV6T5G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Kategorie:
Getrennter Halbleiter
Spezifikationen
Part Number:
EMX1DXV6T5G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
EMX1DXV6T5G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.38
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
hFE Min:
120
Frequency:
180 MHz
Case/Package:
SOT-563-6
Number of Pins:
6
Power Dissipation:
500 mW
Voltage Rating (DC):
50 V
Element Configuration:
Dual
Max Power Dissipation:
500 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
7 V
Collector Emitter Voltage (VCEO):
50 V
Collector Emitter Saturation Voltage:
400 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
7903 In Stock
Applications:
Mobile phones
Gaming
Grid infrastructure
Polarity:
NPN
Packaging:
Tape and Reel
Current Rating:
100 mA
Contact Plating:
Tin
Number of Elements:
2
Transition Frequency:
180 MHz
Max Collector Current:
100 mA
Gain Bandwidth Product:
180 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
60 V
Collector Emitter Breakdown Voltage:
50 V
Modellnummer:
Die Daten sind in der Tabelle 1 aufgeführt.
Einleitung
EMX1DXV6T5G Overview\\\\nEMX1DXV6T5G is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have EMX1DXV6T5G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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